Sponsored By

Material promises faster semiconductor speeds

DN Staff

May 18, 1998

1 Min Read
Material promises faster semiconductor speeds

Pacific Northwest National Laboratory is teaming with Sematech (Austin, TX) to develop a new material for the next generation of high-performance semiconductor devices, including advanced microprocessors. Through the $1.5 million project, collaborators will investigate mesoporous silica as an improved insulating material between metal conduction lines on semiconductor chips. The material, porous and uniform in structure, can be formed into thin films, potentially resulting in semiconductor devices that operate at much higher speeds, while consuming less power. Researchers at Pacific Northwest estimate that the new material should result in significant savings in fabrication costs, up to $500 million annually. FAX: (509) 375-2242.

Sign up for the Design News Daily newsletter.

You May Also Like