Silicon Carbide Power MOSFET

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its entire operating temperature range. This consistency of performance characteristics across operating conditions, along with a true MOSFET device architecture (normally-off), makes it useful for power electronics switching circuits. Compared to commercially available silicon MOSFET or IGBT devices of similar ratings, in tests conducted by Cree the CMF20120D had the lowest gate drive energy (QG <100nC) across the recommended input voltage range. Conduction losses were minimized with forward drop (VF) of <2V at a current of 20A.

Silicon Carbide Power MOSFET