RF Micro Devices' 140W Transistor for Volume Production

The RF3934 operates over a broadfrequency range (dc to 3GHz) in a single amplifier design. The high peakefficiency of >65 percent minimizes thermal management demand and improvesoverall power consumption requirements for end customers. Additionally, ease ofdesign implementation and integration is enhanced through the incorporation ofsimple, optimized matching networks external to the package, providing widebandgain and power performance advantages in a single amplifier.

The RF3934 ispackaged in a hermetic, flanged ceramic two-leaded package that leveragesRFMD's advanced heat sink and power dissipation technologies to deliverexcellent thermal stability and conductivity. The RF3934 is designed inRFMD's 48-volt high power-density GaN semiconductor process-featuring a uniquecombination of high RF power density and efficiency, low capacitance and highthermal conductivity. Such features enable the development of compact andefficient high power amplifiers (HPAs) for a broad range of applications,including public mobile radio (PMR), 3G/4G wireless infrastructure, ISM(industrial scientific & medical), military and civilian radar and CATVtransmission networks