I am sure I have experienced parasitic osc, but never identified it in practice before. As for passing EMI I have experienced issues in passing Class B. Class A designed that I worked on require only an addition of ferrite ring on cabling inside the unit.
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On Tuesday someone asked about the Vds available for fet. Digikey has a fet selector chart that lists 4500 v for a small number of products. Is there anything to keep in mind when using these high voltages like isolation of the gate driver or keeping these voltages separate and or floating?
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One concept I have seen that prevents overlap shoot-through is to use a triangle wave to trigger the forward and reverse pair of FETs. A DC offset is increased to move more of the triangle above the trigger voltage of the Forward FETs, thus increasing the duty cycle. The triangle wave is moved downward by lowering the DC offset and moving more of the triangle into the Reverse FETs. The difference in Forward and Reverse trigger voltages is greater than the P-P voltage of the triangle wave, thus the waveform can never trigger both pairs of FETs at once. Any other schemes to share?
What should be the perception of a product’s real-world performance with regard to the published spec sheet? While it is easy to assume that the product will operate according to spec, what variables should be considered, and is that a designer obligation or a customer responsibility? Or both?
Biomimicry has already found its way into the development of robots and new materials, with researchers studying animals and nature to come up with new innovations. Now thanks to researchers in Boston, biomimicry could even inform the future of electrical networks for next-generation displays.
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