I am sure I have experienced parasitic osc, but never identified it in practice before. As for passing EMI I have experienced issues in passing Class B. Class A designed that I worked on require only an addition of ferrite ring on cabling inside the unit.
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On Tuesday someone asked about the Vds available for fet. Digikey has a fet selector chart that lists 4500 v for a small number of products. Is there anything to keep in mind when using these high voltages like isolation of the gate driver or keeping these voltages separate and or floating?
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One concept I have seen that prevents overlap shoot-through is to use a triangle wave to trigger the forward and reverse pair of FETs. A DC offset is increased to move more of the triangle above the trigger voltage of the Forward FETs, thus increasing the duty cycle. The triangle wave is moved downward by lowering the DC offset and moving more of the triangle into the Reverse FETs. The difference in Forward and Reverse trigger voltages is greater than the P-P voltage of the triangle wave, thus the waveform can never trigger both pairs of FETs at once. Any other schemes to share?
The company says it anticipates high-definition video for home security and other uses will be the next mature technology integrated into the IoT domain, hence the introduction of its MatrixCam devkit.
Siemens and Georgia Institute of Technology are partnering to address limitations in the current additive manufacturing design-to-production chain in an applied research project as part of the federally backed America Makes program.
Most of the new 3D printers and 3D printing technologies in this crop are breaking some boundaries, whether it's build volume-per-dollar ratios, multimaterials printing techniques, or new materials types.
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