RF Micro Devices Inc.'s RF724x power amplifiers
support ultra-high peak efficiency of 48-51 percent and is comprised of five
PAs covering WCDMA bands 1, 2, 4, 5 and 8, addressing common 3G/4G frequency
bands and band combinations. All RF724x power amplifiers are packaged in a 3x3
mm footprint, improving smartphone platform flexibility and ease of
implementation. RFMD's RF724x power amplifiers also feature an integrated high
directivity coupler, standard 2-bit GPIO control logic and low insertion phase
shift between bias states.
When combined with one of
RFMD's companion dc-dc converters or with chipsets featuring on-chip dc-dc
converter functionality, RFMD's RF724x power amplifiers can deliver DG.09
performance as low as 13 mA - directly translating into 3G talk time.
Design collaboration now includes the entire value chain. From suppliers to customers, purchasing to outside experts, the collaborative design team includes internal and external groups. The design process now stretches across the globe in multiple software formats.
A new high-pressure injection-molding technology produces near-net shape parts with 2-inch-thick walls from high-performance materials like PEEK, PAI, and carbon-filled polymers. Parts show no voids, sinks, or porosity, have more consistent mechanical properties, and are stronger.
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