Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its entire operating temperature range. This consistency of performance characteristics across operating conditions, along with a true MOSFET device architecture (normally-off), makes it useful for power electronics switching circuits. Compared to commercially available silicon MOSFET or IGBT devices of similar ratings, in tests conducted by Cree the CMF20120D had the lowest gate drive energy (QG <100nC) across the recommended input voltage range. Conduction losses were minimized with forward drop (VF) of <2V at a current of 20A.
We looked at a number of sources to determine this year's greenest cars, from KBB to automotive trade magazines to environmental organizations. These 14 cars emerged as being great at either stretching fuel or reducing carbon footprint.
From Dell / Intel® New Paradigms in Design Work Scott Hamilton, vertical market strategist for Dell Precision workstations, 5/2/2013 3
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A lasting memory from my first job as an engineer in an auto assembly plant is standing on hard concrete at six in the morning, vending-machine coffee clutched in hand, listening to ...
A quick look into the merger of two powerhouse 3D printing OEMs and the new leader in rapid prototyping solutions, Stratasys. The industrial revolution is now led by 3D printing and engineers are given the opportunity to fully maximize their design capabilities, reduce their time-to-market and functionally test prototypes cheaper, faster and easier. Bruce Bradshaw, Director of Marketing in North America, will explore the large product offering and variety of materials that will help CAD designers articulate their product design with actual, physical prototypes. This broadcast will dive deep into technical information including application specific stories from real world customers and their experiences with 3D printing. 3D Printing is
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