Ever lose data because your computer loses power? Chia-Ling Chien, a professor of physics at the Krieger School of Arts and Sciences at Johns Hopkins University, may have a solution. He developed a new chromium dioxide material called "half-metallic ferromagnet" that could change the way computer memory works. Computer memory currently uses dynamic random access memory (DRAM). Chien's material enables a new technology called magnetic random access memory (MRAM), which he says will allow retention of data even when power is lost. "Capacitors in current memory systems leak and have to be refreshed to prevent data loss," says Chien. "MRAM relies on magnetic orientation. Loss of power would not mean a loss of the data it stores," he says. MRAM harnesses the power of the electron's spin, a characteristic that conventional electronic circuits do not use. Electronic spin and a material's magnetic property are linked. The new chromium dioxide material is 96% spin-polarized, meaning that nearly all electrons spin in the same orientation. The spin-polarized material is thought to be useful in electrodes, where controlling the magnetization makes the junction switch between high and low electrical resistance. For more information, go to www.pha.jhu.edu.
When you think of the DARPA Robotics Challenge, you may imagine complex humanoid contraptions made of metal and wires that move like a Terminator Series T-90. But what actually happened at the much-vaunted event was something just a bit different.
Traditional dev kits are based on a manufacturer’s microcontroller, radio module, or sensor device. The idea is to aid the design engineer in developing his or her own IoT prototype as quickly as possible. A not-so-traditional IoT development kit released by Bosch aims to simplify IoT prototyping even further.
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