Researchers have found that the band gap of semiconductor indium nitride is not 2 eV as previously thought, but a much lower 0.7 eV. Scientists from the Lawrence Berkeley National Laboratory, Cornell University, and Japan's Ritsumeikan University have discovered that a single system of alloys incorporating indium, gallium, and nitrogen can convert virtually the full spectrum of sunlight to electrical current. Such a discovery could eventually lead to the delivery of the most efficient and relatively inexpensive solar cells. For more information, go to www.lbl.gov/science-articles/archive.
Digital healthcare devices and wearable electronic products need to be thoroughly tested, lest they live short, ignominious lives, an expert will tell attendees at UBM’s upcoming Designer of Things Conference in San Jose, Calif.
The company says it anticipates high-definition video for home security and other uses will be the next mature technology integrated into the IoT domain, hence the introduction of its MatrixCam devkit.
Siemens and Georgia Institute of Technology are partnering to address limitations in the current additive manufacturing design-to-production chain in an applied research project as part of the federally backed America Makes program.
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