ELECTRONICS: STMicroelectronics has increased the power density achievable with its latest generation MDmesh™ V power MOSFET technology by introducing an advanced high-performance power package.
The new 1mm-high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring only 8×8mm and features an exposed metal drain pad for efficient removal of internally generated heat. Its low profile will enable designers to achieve slimmer power supply enclosures enabling compact and stylish new products for today’s markets. This new standard is available from two companies: STMicroelectronics and Infineon Technologies will introduce MOSFETs using this innovative package, which is named PowerFLAT™ 8×8 HV by ST and ThinPAK 8×8 by Infineon, therefore providing customers with a high-quality alternative source.
The new package’s compact form factor and high thermal performance, combined with the unequalled low RDS(ON) per die area of ST’s MDmesh V technology, maximize power density and reliability to save PCB space. ST will add MOSFETs in the PowerFLAT 8×8 HV to its existing MDmesh V portfolio, and today announced the first of these: the 650V STL21N65M5.
Major features of STL21N65M5:
- RDS(ON): 0.190Ω
- Maximum rated current (ID): 17A
- Junction-to-case thermal resistance (Rthj-c): 1.0 degrees C/W
Samples of the STL21N65M5 in the PowerFLAT 8×8 HV package are available now with full production scheduled for July 2010. Pricing is $8 in quantities of 10 pieces; further pricing options are available for larger quantities.
-Edited by Kelsey Anderson
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