ELECTRONICS: International Rectifier’s family of HEXFET® power MOSFETs delivers the industry’s lowest on-state resistance. The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5 x 6 mm PQFN package with optimized copper clip and solder die. The IRFH6200TRPbF 20V device delivers industry-leading RDS(on) of only 1.2 mΩ (max.) at 4.5V Vgs to significantly cut conduction losses for dc motor drive applications such as hand tools.
The 25V IRFH5250TRPbF and 30V IRFH53xxTRPbF devices are designed for dc switch applications such as active ORing and dc motor drive applications requiring high current carrying capability and high efficiency. The IRFH5250TRPbF features ultra low RDS(on) of 1.15 mΩ (maximum) combined with just 52nC gate charge while the IRFH5300TRPbF delivers RDS(on) of only 1.4 mΩ (maximum) combined with 50nC Qg.
In addition to achieving excellent thermal performance, as a result of using the IRFH6200TRPbF, IRFH5250TRPbF and IRFH53xxTRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
All of the devices feature low thermal resistance (<0.5C/W), are MSL1 industrial-qualified and RoHS compliant containing no lead, bromide or halogen.
Pricing for the IRFH6200TRPbF, IRFH5250TRPbF and IRFH5300TRPbF begins at U.S. $1.10, U.S. $1.05 and U.S. $1 each respectively in 10,000-unit quantities. Production orders are available immediately. Prices are subject to change.
-Edited by Kelsey Anderson
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