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Gallium Nitride-on-Diamond® Semiconductor Wafer

By Design News Staff -- Design News, July 17, 2006

Atomic construction cuts heat build-up

This 10 x 10 mm wafer uses Group4 Labs' own technology to atomically attach a single gallium nitride layer to a 25-micron-thick synthetic diamond substrate. The exterior has an atomically smooth finish with a gallium-facing surface that is epi-ready for further epitaxial deposition. It comes freestanding or on a disposable silicon wafer mount. It uses the sub-nanometer proximity of the chip's active region to the diamond to extract heat from the chip's core almost the very instant it is generated, lowering heat build-up during high-power and high-speed transistor applications. The diamond's thermal conductivity is about 3-30 times more than ordinary semiconductors, boosting a transistor array's power-density by at least 10-100 times. It sells for $500-$600 per unit based on quantity. Group4 Labs LLChttp://rbi.ims.ca/4928-637

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